Photothermal (PT) and photoacoustic (PA) processes are two closely related phenomena that occur in semiconductor materials that are exposed to light energy or optical beam absorption and surface recombination in and on the sample. These phenomena have been studied in semiconductor materials because they have important applications in various sectors, including renewable energy and sensing. The elastic and thermal problem in one dimension is solved by adding photothermal excitation and photoacoustic waves on the free surface of a semiinfinite semiconducting medium. The governing equations of the problem under the influence of a microtemperature field are solved using the integral transform technique. The inverse Laplace method is used to solve the mathematical problem. Temperature, acoustic pressure, elastic and mechanical distributions, microtemperature and heat flux distributions, and carrier density diffusion are all physical parameters that can be determined from the mathematical model’s numerical solutions. The numerical results obtained from several comparisons are discussed and illustrated graphically. The most significant result indicates that microtemperature effects and photogenerated carrier lifetimes greatly influence semiconductor media’s thermal and elastic wave behavior, which is crucial for microstructure-based photothermal design.