Purpose This study develops a novel theoretical model that investigates the coupled effects of thermoelasticity, plasma, and moisture diffusivity in a semiconductor medium subjected to laser pulse heating. Design/Methodology/Approach A one-dimensional photo-thermoelastic model is formulated for an isotropic, homogeneous, and thermoelastic semiconductor halfspace with temperature-dependent properties. The surface of the medium is assumed to be traction-free and irradiated by a laser source with spatial and temporal Gaussian distribution. The theory of photothermoelasticity is employed to analyze the induced elastic, thermal, and optoelectronic deformations. Governing equations incorporating mechanical stresses, plasma, and moisture diffusion effects are solved in the Laplace domain under appropriate boundary conditions. Numerical computations are carried out for silicon material, and the solutions are presented graphically. Findings The results reveal significant coupling interactions between photo-thermoelastic stresses and moisture diffusion under laser pulse heating. Temperature dependence of material properties plays a vital role in the dynamic responses. The obtained numerical results illustrate the distribution and evolution of displacement, stresses, temperature, carrier density, and moisture concentration fields. Originality/Value The proposed model provides new insights into the interaction between laser-induced thermal, plasma, and moisture diffusion processes in semiconductor media. This framework can be applied to the design and optimization of semiconductor devices operating under coupled photo-thermo-mechanical environments.