This paper presents a novel photo-thermoelastic wave model that integrates porosity effects, plasma interactions, and band-gap engineering within a semiconductor metamaterial framework under different boundary and excitation conditions. Due to its engineered porosity and periodic structure, a porous metamaterial is a structured composite material with unique mechanical, thermal, or wave propagation properties. The primary motivation behind this research is to explore how porosity-induced microvoids, thermal relaxation effects, and electron-plasma interactions influence the propagation of thermoelastic waves in porous semiconductor metamaterials. Introducing plasma wave interactions in the metamaterial framework, accounting for electron diffusion, recombination, and their influence on mechanical and thermal fields. Applying a normal mode technique to derive and solve governing differential equations in two dimensions that describe elastic, thermal, and plasma waves in a porous semiconductor metamaterial. The results indicate that by tuning porosity levels, carrier diffusion parameters, and thermal relaxation times, wave propagation in semiconductor metamaterials can be engineered for optimized energy transfer and signal processing applications.