This study introduces a novel mathematical model for magneto-photo-thermoelastic interaction in hollow cylindrical semiconductors, utilizing a Moore–Gibson–Thompson (MGT) type heat transport process. This advanced model integrates Eringen-type nonlocality and a memory-dependent Fourier law, addressing gaps in understanding photothermoelastic interaction in nonlocal semiconductors. An isotropic cylindrical body with its inner surface at zero temperature and carrier density flux, and its outer surface traction-free with specified heat and carrier density flux is considered. The governing equations, formulated using memorydependent MGT theory and Eringen’s nonlocal stress theory, are solved via the Galerkin finite element method (GFEM) after applying Laplace transforms. Numerical inversion, based on Bellman’s proposition, yields quantitative results for all physical fields in the spatiotemporal domain. The results show the benefits of a nonlinear kernel function over linear ones and highlight the important role of nonlocal theory. Additionally, the study shows how sensitive physical fields are to time-delay parameters, with longer delay times amplifying each field and indicating a lag in heat transport. Furthermore, because thermal waves propagate at finite speeds, photothermal excitation results in significant changes in thermophysical variables. Because they are independent, the temperature field is unaffected by the induced magnetic field. These results contribute to theoretical knowledge and offer useful optimization recommendations for semiconductor design.