The implementation of a stochastic simulation was carried out using an elastic-thermodiffusion (ETD) model of the electrons-holes interaction problem, utilizing photo-thermoelastic theory. This study investigates deformations in a two-dimensional (2D) context, incorporating the influences of thermoelastic (TD) and electronic (ED) transport mechanisms. The use of a Weiner function or white noise with a boundary condition introduces a stochastic component, hence enhancing the realism of the problem. The normal mode analysis was employed to obtain deterministic and stochastic outcomes for all physical quantities. Three unique paths are developed to evaluate the dispersion of the stochastic and deterministic fields. The mean and standard deviation of the most pertinent physical variables are calculated and examined. Silicon (Si) semiconductor materials are utilized for modeling and analysis. The study included the provision of graphs and discussions about the obtained results.