The study of semiconductor materials under the combined influence of thermal, mechanical, and optical fields is critical for advancing nanoelectronic and optoelectronic applications. Traditional modeling approaches have largely relied on deterministic frameworks, which overlook the inherent randomness present in real-world systems due to thermal fluctuations, material heterogeneity, and environmental disturbances. This study aims to develop a comprehensive stochastic model for analyzing thermo-hydro-mechanical photoelastic interactions in poro-semiconductors, accounting for white noise effects. Using generalized photo-thermoelasticity theory, we incorporate hydromechanical coupling, pore pressure, and electron-plasma interactions in a fully saturated poroelastic silicon medium. The system of governing equations is solved analytically using Laplace and Fourier transform techniques to obtain deterministic and stochastic solutions. Variance analysis is employed to evaluate the effects of stochastic perturbations, and graphical comparisons highlight deviations between stochastic and classical deterministic responses. The results show that randomness significantly affects wave propagation characteristics, particularly in temperature, carrier density, displacement, and stress distributions. This research contributes a new theoretical framework for analyzing wave behavior under uncertain conditions, enhancing the reliability of semiconductor modeling. The novelty of this work lies in the integration of stochastic white noise, variance analysis, and hydromechanical coupling within a unified analytical model, which, to the best of our knowledge, has not been previously investigated in poroelastic semiconductors.