Purpose This study develops a stochastic photo-acoustic-thermo-hydro-mechanical framework for analyzing wave propagation in poroelastic semiconductor materials. The aim is to extend deterministic photo-thermoelastic models by integrating stochastic effects, thereby providing a more realistic prediction of semiconductor behavior under laser excitation Originality Unlike traditional deterministic models, the proposed approach incorporates white noise fluctuations in the boundary conditions through a Wiener process, allowing stochastic characterization of temperature, displacement, carrier density, pore water pressure, stress, and acoustic pressure. Numerical results reveal that temperature and displacement variances exhibit exponential decay with depth, whereas carrier density, water pressure, and stress variances show peak instability before stabilization. These findings highlight abnormal behaviors that cannot be captured by classical deterministic frameworks. Findings Numerical simulations on poro‑silicon (PSi) confirm that stochastic effects strongly influence semiconductor responses. For instance, at shallow depths, stochastic temperature variance is nearly double that of the deterministic case, but this difference diminishes at larger depths. Acoustic pressure displays large boundary fluctuations that gradually converge to the deterministic distribution. Such results demonstrate the importance of incorporating randomness in predictive modeling Limitations The model assumes linear material behavior and Gaussian white noise processes. Nonlinear effects, non-Gaussian noise, and experimental verification remain outside the current scope. Practical implications The framework provides valuable insights for the design of optoelectronic devices, MEMS, photothermal spectroscopy systems, and laser-assisted material processing, where random fluctuations strongly affect stability and performance.