The objective of this study is to investigate the effects of rotation field on a semiconductor material with general photo-piezo-thermo-elastic characteristics. The primary goal is to analyze how the semiconductor behaves under and laser pulse effect. The research assumes that the piezo-semiconductor medium being studied is uniform and has consistent orthotropic properties when it is subjected to photo-thermal excitation according to moisture plasma diffusion processes. The piezoelectric phenomenon’s impact can be determined by employing Gauss’s law of electrostatics. Several important variables, including temperature distribution field, carrier density from both types of moisture, electric potential displacement, and stress components, have been precisely calculated using the normal mode approach. The study uses graphical representation to show how the physical field distribution changes with different times, rotation parameters, and thermal conductivity. The findings indicate that various factors, including time, thermal coupling parameter, and rotation field, have a significant impact on the amplitude of the distribution profile, and align with the observed physical outcomes. These factors must be taken into consideration when analyzing and designing piezo-semiconductors.