Anovel hydrodynamic semiconductor model under Hall current effect and laser pulsed excitation

Faculty Science Year: 2024
Type of Publication: ZU Hosted Pages:
Authors:
Journal: Phys. Fluids AIP Publishing. Volume:
Keywords : Anovel hydrodynamic semiconductor model under Hall    
Abstract:
This paper presents a novel investigation into the effects of a strong external magnetic field on a hydro-poroelastic semiconductor model within the framework of photo-thermoelasticity theory in two dimensions. This study focuses on generating a Hall current and its impact on the coupled behavior of thermal, mechanical, and electronic fields in a semiconductor medium saturated with fluid. Using the normal mode analysis, we derive and analyze the wave propagation characteristics of key physical fields, including the non-dimensional temperature, displacement, mechanical stresses, carrier density, and excess pore water pressure, in response to the imposed magnetic field. Boundary con ditions relevant to real-world applications are incorporated to assess the interactions between these fields. The results provide insight into the dynamic coupling of electromagnetic, thermal, and mechanical phenomena in porous semiconductor materials and offer potential applica tions in the design of magneto-sensitive semiconductor devices as well as in geophysical and biomedical engineering fields where such multi field interactions are critical. The results obtained are plotted with some comparisons.
   
     
 
       

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