In this study, a novel theoretical approach to describe thermo-optical elastic materials is proposed. This formulation offers insights into the relationship between plasma waves and thermomechanical waves when the microtem perature properties of semiconductor materials such as silicon are taken into account. The proposed model involves incorporating the concept of micro temperature effect according to photothermal (PT) excitation processes in nonlocal photo-thermoelasticity. The investigation of the electron-hole inter action concerning the elasto-thermodiffusion (ETD) theory in the context of thermoelastic (TD) and electronic (ED) deformation is the main focus of the work. The advanced model is utilized to analyze how the mechanical loading of ramp-like structures impacts the unrestricted nonlocality semiconductor material on a free outer plane. The Laplace transform approach in one- dimensional (1D) provides an analytical solution for main non-dimensional thermo-photo-elastic fields (the hole charge carrier field, the displacement (acoustic) wave, thermal wave, and plasma wave (carrier density). The pri mary fields in the Laplace domain are obtained analytically, and boundary conditions are established using a mechanical ramp type. Using a numerical inverse Laplace transform, full time domain solutions for the fundamental f ields are obtained numerically according to the Riemann-sum approxima tion approach. The graphical representations illustrate and discuss the out comes of the main physical fields.