A Novel Model of Semiconductor Porosity Medium According to Photo-Thermoelasticity Excitation with Initial Stress

Faculty Science Year: 2022
Type of Publication: ZU Hosted Pages: 17
Authors:
Journal: Crystals MDPI Volume:
Keywords : , Novel Model , Semiconductor Porosity Medium According to    
Abstract:
: Investigated is a novel model in the photo-thermoelasticity theory that takes into account the impact of porosity and initial stress. A generalized photo-thermoelastic that is initially stressed and has voids is taken into consideration f
   
     
 
       

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