This article introduces mathematical, theoretical physics model when the interaction between the electrons and holes for the semiconductor medium is investigated. The model is studied in the generalized elasto-thermodiffusion (ETD) theory with the initial stress impact during the photothermal (PT) excitation. The governing equations give a detailed account of a one-dimensional (1D) thermoelastic (TD) and electronic(ED) deformation. The basic equations are obtained for the elastic medium without dispersion in a nondimensional case. The hole charge carrier, displacement, thermal and plasma waves are coupled due to photo-thermal excitation. The Laplace transform method has been applied to solve the coupled principle governing equations. The boundary conditions are applied according to ramp-type heating to obtain the principle fields analytically in Laplace domain. Laplace transform inversion is used numerically to obtain the complete solutions in time domain for the basic fields. The effects of relaxation times according to the photo-thermoelasticity theories and the impact of initial stress are obtained graphically (2D and 3D plots) and discussed with comparing between silicon and germanium semiconductor materials