In this work, the interaction between electrons and holes is investigated according to a theoretical mathematical-physical description of an excited semiconductor medium. The mechanical-elasticthermodiffusion (METD) theory during photothermal excitation processes with optical properties is taken into account. The governing equations are examined under the effect of an external magnetic field. The one-dimensional (1D) deformation is constructed when thermoelastic (TD) and electronic(ED) deformation with the holes processes has occurred. The dimensionless field quantities are used algebraically by applying mathematical techniques for the main physical fields (hole charge field carrier, elastic, thermal, and electrons charge carrier density (plasma) waves). Laplace transform and some initial conditions in the time domain are used mathematically to solve the governing equations. The conditions are taken at the boundary for the main physical fields subjected to ramp heating type in the Laplace domain. Laplace inverse transform with approximate technique is used numerically to obtain the closed form of the main physical fields in the time domain. Some comparisons are carried out graphically under the effect of many parameters and discussed for the silicon semiconductor material.