A novel mathematical-theoretical model is intreduced to study the microstretch properties of elastic semiconductor medium. The theoretical model is obtained during the photoexcitation transport processes in the generalized thermoelasticty theory. The new model can be called Microstretch-photo-thermoelasticity (MPT) theory, the MPT model is studied under the impact of hydrostatic initial stress. The carriers charge feld (carrier density or plasma wave) appears due to optical excitation. During this model the interaction between thermal–mechanical-plasma waves is obtained when the medium is in a rotating case. When the medium is linear, isotropic and homogenous, the two dimension (2D) elastic and electronics deformation governing equations are investigated when the microinertia of the medium particles is taken into consideration. The basic physical variables are obtained with the mathematical plane harmonic wave technique to get the general solutions. The complete analytical solutions have been solved completely when some conditions from mechanical-thermal and plasma type are acted at the free surface of the medium. The silicon (Si) and Germanium (Ge) materials are used to make the numerical simulations. The numerical results are displayed graphically and discussed