This work focuses on presenting a novel model describing a layer of an excited microelongated semiconductor material. During the photo-excitation processes, the model is investigated in a rotational field. The model introduced the microelongation scalar function, which describes the microelement processes according to the micropolar-thermoelasticity theory. The model studies the interaction case between optical-thermo-mechanical waves under the effect of rotation parameters when the microelongation parameters are taken into consideration according to the photo-thermoelasticity theory. The main governing equations have been taken in a dimensionless form during the electronic and thermoelastic deformation and they have been studied under the harmonic wave technique. The general solutions of the basic fields of isotropic, homogeneous, and linear microelongated semiconductor medium are obtained in two dimensions (2D). Many conditions are taken at the free surface of the medium to obtain the complete solutions. The physical parameters of silicon (Si) are used to illustrate the numerical simulation of the main fields. Several comparisons were performed and illustrated graphically under the influence of different parameters of relaxation time and rotation