A novel model is formulated of a microelongated semiconductor material. The material is excited in the context of photothermal transport processes. The photo-thermoelasticity theories are applied when the thermal conductivity of the microelongated semiconductor medium is changed. The novel model describes the microelongation case and the interference between the different propagation waves in the elastic medium. Thermal conductivity can be taken as a linear function of temperature during electronic and thermoelastic deformation processes. The dimensionless main fields are taken in a two-dimensional (2D) with maps converter. The harmonic wave method according to the normal mode analysis has been applied to convert the main equations to higher-order ordinary differential equations (ODE). Complete solutions are obtained by applying some conditions that are taken on the semiconductor surface. The results obtained for silicon (Si) are numerically simulated, with illustrations showing this. The comparisons are made and discussed for the main fields during the variable thermal conductivity and microelongation.