The present study introduces a theoretical framework according to the Moore-GibsonThompson (MGT) Model in the context of generalized thermoelasticity theory. The excited semiconductor material is utilized to formulate the governing equations in one dimensional (1D) with a non-local parameter. According to the photo- thermoelasticity theory, the overlapping between the electronic (optical) deformation and elastic deformation is taken into account. During the photo-excitation processes, the non-local equation of motion and the heat equation is introduced according to the model of Moore-Gibson-Thompson (MGT). The novel model describes the interaction between plasma and thermomechanical waves in a non-dimensional form. Laplace transform for time variable is applied to convert the governing equations into system of ordinary differential equations. The vector-matrix differential equation with the eigenvalues approach method is employed to obtain the solutions of the physical quantities analytically. Laplace transform invers numerically is utilized when some boundary conditions are applied at the semiconductor free surface to obtain the complete general of the main physical quantities. The numerical computations for the input parameters of Silicon as semiconductor material are used to illustrate the obtained results graphically and discussed.