A 10 Gb/s, 150 mA Laser Diode Driver with Active Back-Termination in 0.13-µm SOI CMOS Technology

Faculty Engineering Year: 2020
Type of Publication: ZU Hosted Pages: 91-93
Authors:
Ahmed Wahba Abdalla Elsayed
Journal: 2019 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) IEEE Volume:
Keywords : , , Gb/s, , , Laser Diode Driver with Active    
Abstract:
The design of a 10 Gb/s laser diode driver (LDD) in 0.13-μm SOI CMOS technology is described. The driver utilizes cross-coupled neutralization capacitors and integrates a tunable negative capacitance circuit to extend the bandwidth. Loading
    
     
 
       

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