A 10 Gb/s, 150 mA Laser Diode Driver with Active Back-Termination in 0.13-µm SOI CMOS Technology

Faculty Engineering Year: 2020
Type of Publication: ZU Hosted Pages: 91-93
Authors:
Ahmed Wahba Abdalla Elsayed
Journal: 2019 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) IEEE Volume:
Keywords : , , Gb/s, , , Laser Diode Driver with Active    
Abstract:
The design of a 10 Gb/s laser diode driver (LDD) in 0.13-μm SOI CMOS technology is described. The driver utilizes cross-coupled neutralization capacitors and integrates a tunable negative capacitance circuit to extend the bandwidth. Loading
    
     
 
       

Author Related Publications

  • Ahmed Wahba Abdalla Elsayed, "New UMTS multiband design for TX-leakage suppression in RF front-end transcievers", IEEE, 2015 More
  • Ahmed Wahba Abdalla Elsayed, "A 15 Gbps-NRZ, 30 Gbps-PAM4, 120 mA laser diode driver implemented in 0.15-µm GaAs E-mode pHEMT technology", Journal of Semiconductors, 2021 More
  • Ahmed Wahba Abdalla Elsayed, "Monolithic design of self-adaptive CMOS converter and robust event-triggered consensus control for integration of multi-renewable energy sources with battery storage system", Elsevier, 2024 More
  • Ahmed Wahba Abdalla Elsayed, "A power-efficient dynamic-time current mode comparator", Urban & Fischer, 2023 More

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