Zagazig University Digital Repository
Home
Thesis & Publications
All Contents
Publications
Thesis
Graduation Projects
Research Area
Research Area Reports
Search by Research Area
Universities Thesis
ACADEMIC Links
ACADEMIC RESEARCH
Zagazig University Authors
Africa Research Statistics
Google Scholar
Research Gate
Researcher ID
CrossRef
Optical and electrical properties of Ge10+xSe40Te50-x thin film
Faculty
Engineering
Year:
2001
Type of Publication:
Article
Pages:
1549-1553
Authors:
Fayek, SA, El-Ocker, M, Hassanien, AS
DOI:
10.1557/JMR.2001.0215
Journal:
JOURNAL OF MATERIALS RESEARCH MATERIALS RESEARCH SOCIETY
Volume:
16
Research Area:
Materials Science
ISSN
ISI:000169206600004
Keywords :
Optical , electrical properties , Ge10+xSe40Te50-x thin film
Abstract:
Thin films with thickness 100 nm of Ge10+xSe40Te50=x (I ranging from 0.0 to 16.65 at.\%,) were formed by vacuum deposition at 1.33 x 10(-4) Pa. The change in electrical resistivity of the films has been measured using the coplanar method. The measurements have been carried out in a temperature range between 400 and 142 K. The values of the electrical activation energies lie in the range of 0.18-0.38 eV. The optical absorption behavior of these ternary thin films was studied from the reflection and transmission. The optical band gap was found to be in the range of 0.90-1.11 eV and arose from indirect transitions. On the other hand, the width of the band tail E-e was found in the range 0.19-0.32 eV and exhibits opposite behavior. This behavior is believed to be associated with a defected bond of Te-Te and a cohesive energy (CE).
Online
PDF
جامعة المنصورة
جامعة الاسكندرية
جامعة القاهرة
جامعة سوهاج
جامعة الفيوم
جامعة بنها
جامعة دمياط
جامعة بورسعيد
جامعة حلوان
جامعة السويس
شراقوة
جامعة المنيا
جامعة دمنهور
جامعة المنوفية
جامعة أسوان
جامعة جنوب الوادى
جامعة قناة السويس
جامعة عين شمس
جامعة أسيوط
جامعة كفر الشيخ
جامعة السادات
جامعة طنطا
جامعة بنى سويف