Optical and electrical properties of Ge10+xSe40Te50-x thin film

Faculty Engineering Year: 2001
Type of Publication: Article Pages: 1549-1553
Authors: DOI: 10.1557/JMR.2001.0215
Journal: JOURNAL OF MATERIALS RESEARCH MATERIALS RESEARCH SOCIETY Volume: 16
Research Area: Materials Science ISSN ISI:000169206600004
Keywords : Optical , electrical properties , Ge10+xSe40Te50-x thin film    
Abstract:
Thin films with thickness 100 nm of Ge10+xSe40Te50=x (I ranging from 0.0 to 16.65 at.\%,) were formed by vacuum deposition at 1.33 x 10(-4) Pa. The change in electrical resistivity of the films has been measured using the coplanar method. The measurements have been carried out in a temperature range between 400 and 142 K. The values of the electrical activation energies lie in the range of 0.18-0.38 eV. The optical absorption behavior of these ternary thin films was studied from the reflection and transmission. The optical band gap was found to be in the range of 0.90-1.11 eV and arose from indirect transitions. On the other hand, the width of the band tail E-e was found in the range 0.19-0.32 eV and exhibits opposite behavior. This behavior is believed to be associated with a defected bond of Te-Te and a cohesive energy (CE).
   
  Online    
PDF  
       
Tweet