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Determination of thickness and porosity of porous silicon layer using photoacoustic technique
Faculty
Science
Year:
2005
Type of Publication:
Article
Pages:
301-304
Authors:
NEGM, S, TALAAT, H, Abdalla, S, El-Brolossy, TA, Yossef, GM
DOI:
10.1051/jp4:2005125072
Journal:
JOURNAL DE PHYSIQUE IV E D P SCIENCES
Volume:
125
Research Area:
Physics
ISSN
ISI:000230014700073
Keywords :
Determination , thickness , porosity , porous silicon layer
Abstract:
The thickness of thin porous layers of silicon samples and their varying porosity have been determined using photoacoustic technique (PA). The measured values of the effective thermal diffusivity (alpha(eff)) and effective thermal effusivity (e(eff)) were exploited to determine the thickness of porous silicon (p-Si) film using the effective layer model. Also the determined alpha(eff) together with the two-layer model were used to obtain the thermal diffusivity of the p-Si layer only. Using Maxwell-Rayleigh model, the porosity percentage for the different samples were determined and compared to the results obtained by scanning electron microscope (SEM) with 10 \% variations.
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