Improving charactertics of dielectric materials used for electronic devices

Dielectric, materials are considered an important key in modem electronic and communication systems. A useful study of a.c conduction mechanism for one of dielectric materials, which is called polysiloxane, is considered in this work. Dielectric characteristics of a thin film layer deposited by glow discharge technique under the effect of different electrical parameters variation are investigated. The conduction mechanism and electrical properties of the deposited film layers are investigated under the effect of variation of frequency, electric field intensity, operating temperature and moisture contents. The experimental results show that the criteria of the conduction mechanism for the material are related to relaxation of Debye and hopping models of the conduction process. They are responsible of electrical losses in the: deposited film layer of dielectric material of polysiloxane deposited by glow discharge technique. An important result is the fact that when the heat treatment process is carried out on polymers film layer of polysiloxane dielectric material, the electrical properties of the deposited dielectric material is improved, as a sensible reduction in dielectric loss and conductivity of thin film layer. Effect of heat treatment processes on a.c conductivities and thermal stability of the thin film layer deposited of polysiloxane using high and low power density of plasma discharge are also presented.