Structural and elastic properties of eutectic Sn-Cu lead-free solder alloy containing small amount of Ag and In

Faculty Science Year: 2011
Type of Publication: Article Pages: 7238-7246
Authors: DOI: 10.1016/j.jallcom.2011.01.062
Journal: JOURNAL OF ALLOYS AND COMPOUNDS ELSEVIER SCIENCE SA Volume: 509
Research Area: Chemistry; Materials Science; Metallurgy \& Metallurgical Engineering ISSN ISI:000291005700009
Keywords : Lead-free solder, Sn-Cu alloys, Microstructure, Elastic properties, Mechanical properties, Pulse-echo technique    
Abstract:
Sn-Cu alloys have been considered as a candidate for high temperature lead-free microelectronic solders. In the present study, the change in microstructure, attenuation and elastic behavior associated with alloying of Ag and/or In into the eutectic Sn-Cu solder alloy system have been evaluated. The study involved measurements of longitudinal and shear wave velocities, attenuation, hardness, bulk and shear moduli, Young's and Poisson's ratio. The results of attenuation show that a clear attenuating effect in the ternary Sn-Cu-Ag and Sn-Cu-In alloys is realized, whereas the quaternary Sn-Cu-Ag-In solder displays an obscure attenuating effect. The obscure effect is mainly attributed to the competition for In between Sn and Ag, which results in weak interface formed between intermetallic compounds (IMCs) and beta-Sn matrix. Likewise, Poisson's ratio results indicate that its value decreases with increasing the elastic moduli and ultrasonic velocities of Ag and In-containing alloys. The analyzed enhanced ductility of Sn-0.7Cu and Sn-0.7Cu-2In alloys and brittleness of Sn-0.7Cu-2Ag and Sn-0.7Cu-2Ag-2In alloys were rationalized on the basis of Poisson's ratio and the quotient of shear modulus to bulk modulus (Pugh's ratio). Microstructural analysis revealed that the origin of change in the elastic properties of the ternary and quaternary alloys is ascribed to smaller beta-Sn dendrite grain dimensions and formation of new IMCs in the ternary and quaternary alloys. (C) 2011 Elsevier B. V. All rights reserved.
   
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