Radiation effects on analog and digital characteraization of electronic devices

The study of radiation effects in semiconductor electronics, and the development of radiation- hard integrated circuits, is being investigated to produces a wealth of data and conceptual understanding to the basic damage mechanisms, and the electrical behavior of the irradiated devices.The standard charge pumping technique had been used as an analysis method for the interface traps accumulated in MOSFET transistors, and it is proved that The CP technique can provide quantitative information on the interface trap densities along the Si/Sio2 interface and can separate the response of the active interface traps. The low frequency noise measurement is used to analyse the border traps and its behaviour under radiation with a calculations of the border trap densities in the MOSFET transistor.