Studies on Silion Cadmium Sulphide (Si-Cds)and Si (Znx-Cd1-X)S Heterojunction Solar Cells

Faculty Engineering Year: 1984
Type of Publication: Theses Pages: 106
Authors:
BibID 10822050
Keywords : Solar Energy    
Abstract:
IThe work present edint his the s i s des cri be s thepreparation , characterization and performance studies ofHeterojunctions formed from n-type CdS and the mixture of CdSand ZnS thin films as a window on sil icon p-type as a base.The study was carried out mainly to investigate theelectrical and optical properties of these films. Most of theel ectrical properties and effic iency are controll ed throughproper choice of the Zn content x of the (Znx-Cd1_x)S/Si,growth method, substrate temperature Tsb and annealingcondition.Chapter(l) gives a general introduction to solar cellcategories and requirements for heterojunction cells.Chapter (2) deals with the qualitative discussion andmathematicalcalculations of the n-(Znx-Cd1_x)S/Siheterojunction solar cell.Expe ri menta 1 tec hn i q ues i nvo 1 vi ng equ i pment employed fo rpreparation and characterization of the ’(Znx-Cd1_x)S/Siheterojunction cells are described in detail in chapter(3).The electrical properties of the cell are expressed in termsof I-V characteristics as a function of Zn constant xIThe wo r k pr e s e n t e din t his the s i s des cri be s thepreparation , characterization and performance studies ofHeterojunctions formed from n-type CdS and the mixture of CdSand ZnS thin films as a window on sil icon p-type as a base.The study was carried out mainly to investigate theelectrical and optical properties of these films. Most of theel ectrical properties and effic iency are controll ed throughproper choice of the Zn content x of the (Znx-Cd1_x)S/Si,growth method, substrate temperature Tsb and annealingcondition.Chapter(l) gives a general introduction to solar cellcategories and requirements for heterojunction cells.Chapter (2) deals with the qualitative discussion andmathematicalcalculations of the n-(Znx-Cd1_x)S/Siheterojunction solar cell.Expe ri menta 1 tec hn i q ues i nvo 1 vi ng equ i pment employed fo rpreparation and characterization of the ’(Znx-Cd1_x)S/Siheterojunction cells are described in detail in chapter(3).The electrical properties of the cell are expressed in termsof I-V characteristics as a function of Zn constant x 
   
     
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